Low-Noise InGaAs/AlInAsSb Avalanche Photodiodes on InP Substrates

Bingtian Guo,Mariah Schwartz,Sri H. Kodati,Kyle M. McNicholas,Hyemin Jung,Seunghyun Lee, Jason Konowitch,Dekang Chen,Junwu Bai,Xiangwen Guo,Theodore J. Ronningen,Christoph H. Grein, Joe C. Campbell,Sanjay Krishna

2023 IEEE Photonics Conference (IPC)（2023）

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摘要

We have demonstrated InGaAs/AlInAsSb separate absorption, charge, and multiplication avalanche photodiodes. The multiplication gain, excess noise, and temperature-dependent dark current have been characterized. InGaAs/AlInAsSb APDs were grown on semi-insulating InP substrates, which is beneficial for bandwidth improvement compared to AlInAsSb APDs grown on GaSb substrates.

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关键词

avalanche photodiodes,AlInAsSb on InP,excess noise,short-wavelength infrared photodetection

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