Ferroelectric Memristive device based on the Wurtzite AlScN film

Wurtzite-based ferroelectric memory has attracted huge interests to revolutionize next generation of electronic devices for their high remanent polarization (Pr >100 mu C cm(-2)), the integration compatibility with back-end-of-line process, high breakdown field, high Curie temperature (> 600 degrees C), and high coercive field. In this work, wurtzite AlScN ferroelectric film has been successfully prepared by magnetron sputtering based on the silicon substrate. The physical behavior of AlScN film has been analyzed by cross-section scanning electron microscope, atomic force microscope, X-ray diffraction, and auger electron spectroscopy. Energy barrier was analyzed during polarization switching of obtained AlScN ferroelectric film based on density functional theory. More interestingly, the Ag/AlScN/Pt ferroelectric memristive devices based on the AlScN film have been fabricated. The resistive-switching behavior has been measured in the AlScN ferroelectric devices in the company with the transition from unipolar switching of a current compliance (CC) of 10 mu A to bipolar switching of 1 mA CC.