A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatnessSirui An,Minhan Mi,Pengfei Wang, Sijia Liu,Qing Zhu,Meng Zhang,Zhihong Chen,Jielong Liu, Siyin Guo,Can Gong,Xiaohua Ma,Yue HaoScience China Information Sciences(2024)引用 0|浏览1暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要