Memristive behavior of UiO-66 metal-organic framework single crystal

Metal-organic frameworks (MOFs) have recently emerged as a new class of scalable and low energy consumptive materials for microelectronic applications. Here, we experimentally extend the list of MOFs with memristive behavior for electronic data storage. Using 15 mu m single crystals of UiO-66 located in 10 mu m gap between Au contacts, we demonstrate an electronic set/reset process upon 15 kV cm-1 of an electric field strength under normal conditions. Such low-energy data recording together with an endurance of more than 7 cycles for set/ reset opens up prospects for the design of MOF-based electronic and opto-electronic devices.