Optimization of Deposition Conditions of SrZrS3 Perovskite Thin Films Grown by Chemical Bath Deposition

Chalcogenide perovskites are receiving considerable attention as a new type of semiconducting material for optoelectronic applications. The current work is carried out on optimization studies for depositing SrZrS3 perovskite thin films via chemical bath deposition. The film properties were investigated as a function of molar concentration ratios (0.4–0.6 M), complexing agent, pH (9–10), deposition time (14–20 h), and annealing temperature (300–500°C). The orthorhombic structure of the deposited thin film was verified by x-ray diffraction (XRD) investigation. The Pnma space group was identified by XRD investigations with lattice constants of 7.09 Å, 9.77 Å, and 6.78 Å. The optical characteristics of the films were examined using a UV–Vis spectrophotometer. Bandgap values in the range of 3.34–3.50 eV, and absorption coefficient 1.75 × 104 cm−1 to 2.15 × 104 cm−1 were observed for the synthesized samples. It was found that 500°C for the annealing temperature and a pH of 10 were the optimal values for the SrZrS3 thin film deposition parameters.