Comparative study of electrical investigation for temperature measurement in AlGaN/GaN HEMT

The modeling of self-heating in GaN-based devices is presented in this paper. A setup for DC I – V and short pulse I – V was used to characterize the device. This paper used four different methods to estimate self-heating, thermal resistance, and channel temperature in a GaN-based high electron mobility transistor (HEMT) fabricated on a SiC substrate. The procedures are basic and straightforward, making them suitable for determining self-heating. We concentrated on reducing the number of measurements needed to determine self-heating and/or channel temperature for any applied ambient temperatures. In addition, a summary of channel temperature for different GaN HEMTs found in—literatures is also presented. Finally, all of the findings are compared using a fair difference threshold. This work reflects an essential and comprehensive understanding of device technology.