Gate Circuit improves p-GaN HEMT VTH reliability

Due to the relative maturity and controllability in the epitaxial growth of p-GaN layers compared to the other techniques, p-GaN/AlGaN/GaN HEMTs are considered the leading structure for enhancement mode HEMT. In the p-GaN layer, the presence of defects related to Magnesium doping and the generation of defects due to the presence of a high electric field can lead to threshold voltage drift via a defect percolation process and ultimately result in device failure. In this work, the p-GaN gate HEMT circuit to designed to control the gate switch speed, and improve the gate reliability.