Novel materials and methods for fabricating memristors for use in RF applications

Due to the technological limitations, nanotechnology-enabled novel RF switches have emerged leading to research efforts in the telecommunications sector focusing on the gradual replacement of conventional switches with switches harnessing the unique properties of nanoelectronic devices such as memristors. Such novel switches have recently been fabricated and characterized, providing optimal behavior under high-frequency stimuli. In this study, we focus on the investigation and fabrication aspects of the numerous novel memristive switches based on 2D materials with prospects of enhancing the performance of memristor-based RF switches. The measurements presented demonstrate the efficacy of the fabricated devices for use in RF switches across diverse applications. More specifically, we highlight their suitability for RF applications, emphasizing their appropriateness for the intended functionality. The performance of the investigated switches is further evaluated with various key figures of merit. Through this presentation, we aim to contribute to the ongoing discussion on the application of memristor-based switches in RF circuits and systems, highlighting the potential advantages and addressing the need for more efficient and reliable alternatives. Additionally, we discuss various aspects of memristors and the implications of their wider adoption in the telecom sector.