Electrostatically defined graphene quantum dots

We demonstrate high-quality gate-defined quantum dots in bilayer graphene and investigate their potential for charge, spin and valley qubits. We show a high level of control and tunability and a deep understanding of the states and level structures of these quantum dots. Recently, we measure promisingly long spin (~50ms) and valley (approaching 1s) relaxation times, comparable to the values obtained in other state-of-the-art semiconductor quantum dot spin qubit systems.