ZnSnN2 Schottky barrier solar cells

The electron density of ZnSnN2 fabricated by different deposition methods is usually much higher than its conduction band density of states and this hinders its device application. By increasing the Zn/Sn atomic ratio of the alloy target, ZnSnN2 with electron density of 1016 cm-3 is fabricated. The obtained ZnSnN2 and silver deposited with radio-frequency sputtering can form Schottky contact which shows photovoltaic effects. The voltage-and frequency-dependent capacitance of the Schottky diodes is further studied. The interface between the Ag-ZnSnN2 is abrupt with interface states of about 1013 eV-1 & sdot;cm- 2 as revealed by the capacitance-voltage curves. The midgap density of states of ZnSnN2 is found to be constant.