Simple parameterization for refractive indices of semiconductors

In this research paper, we suggest a simple parameterization for the refractive indices n of semiconductors. Our suggested model is a rational function of energy gap Eg. The aim of this model is to describe the refractive index for semiconductors at low and high energy gap values. We fitted this model to a data set of experimental data of n with Eg, at 0-10.5 eV. We obtained excellent predictions for n, reflected in the overall average of the absolute value of the deviation between the experimental refractive index and the value estimated by our model. We obtained the smallest deviation among the considered theoretical models, with 6.64. Furthermore, our model determined the value of n at Eg = 0 eV to be a0 = 4.23, which is competitive with the experimental result, where a0 represents n at a zero energy gap. Moreover, our model yields accurate results at IV-VI group semiconductor regions when compared with the other considered theoretical models. We extended our study to investigate whether the suggested model can be useful for extrapolation alongside interpolation and found that this simple parameterization can be used as an extrapolation and interpolation model.