Towards control of Dielectric Properties in Single-Layer WS2via Defect Density Engineering

Tungsten disulfide (WS 2 ) possesses attractive optical and electronic properties, which make it a promising candidate for a wide range of applications. However, upon growth it exhibits an intrinsic variety of defects, affecting its electronic and optical characteristics. This study focuses on the control of dielectric properties of WS 2 via defect density engineering. In particular, we investigate atomically thin WS 2 , grown via liquid phase chemical vapour deposition (LiP-CVD). By tuning the growth parameters, we can obtain WS 2 in different shapes and defect distribution, that are characterized by using optical spectroscopy, photoelectron spectroscopy, and Kelvin probe force microscopy. Our findings reveal the chemical nature of defects in WS 2 and their significant impact on the crystal’s optical properties. By gaining a deeper understanding of the microscopic nature of defects in WS 2 , this research provides a crucial contribution towards the development of a defect-controlled technology to tailor the dielectric environment in 2D crystals.