Controlling barrier height and spectral responsivity of p–i–n based GeSn photodetectors via arsenic incorporation

RSC Advances（2023）

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摘要

Metal induced crystallization (MIC), strained Ge doped with Sn and As, p–i–n photodetectors, tuned direct transitions, spectral responsivity.

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关键词

gesn photodetectors,barrier height,arsenic

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