Three-dimensional modelling of 300 mm Czochralski silicon crystal growth with a transverse magnetic field
CrystEngComm(2023)
摘要
A method including a polynomial fitting step was proposed for crystallization interface correction of Czochralski crystal growth simulation, which can obtain an axisymmetric interface under a non-axisymmetric flow when the crystal rotates.
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关键词
czochralski silicon crystal growth,magnetic field,three-dimensional
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