Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge₄Se₉

Gichang Noh,Hwayoung Song, Heechul Choi,Mingyu Kim,Jae Hwan Jeong,Young Hee Lee,Cheol‐Joo Kim,Saeyoung Oh,Min‐kyung Jo,Dong Yeon Woo,Yooyeon Jo,Eunpyo Park, Eoram Moon,Tae Soo Kim,Hyun‐Jun Chai, Woo Seong Huh, Chul‐Ho Lee,Cheol‐Joo Kim,Heejun Yang,Seungwoo Song,Hu Young Jeong,Yong‐Sung Kim,Gwan Hyoung Lee,Jongsun Lim,Chang Gyoun Kim,Taek‐Mo Chung,Joon Young Kwak,Kibum Kang

Advanced Materials（2023）

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摘要

Adv. Mater. 2022, 34, 2204982 DO: 10.1002/adma.202204982 When originally published, the author name Seungwoo Song was spelled incorrectly. This is hereby corrected as shown in author line above; the author line in the online version of the article has also been corrected accordingly.

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mocvd‐grown,large memory window

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Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge4Se9

Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge₄Se₉