A High Crosstalk Suppression SiC MOSFET Gate Driver

Abstract Fast switching speeds and high switching frequencies bring serious crosstalk problems in SiC MOSFET applications. In this paper, we design a SiC MOSFET gate driver with high crosstalk suppression capability by using a multi-level drive and active Miller clamp technology. In the design, an auxiliary branch is introduced to control the source potential of the SiC MOSFET to achieve multilevel driving. The branch has a simple structure, simple control logic, no external negative voltage supply, and adjustable negative output voltage. The proposed SiC MOSFET gate driver was designed using the Central Semiconductor Manufacturing Corporation (CSMC) 0.8 μm BCD high voltage process. The designed SiC MOSFET gate driver has an area of 2967 μm × 3180 μm. The simulation verification model is based on Wolfspeed’s SiC MOSFET product C3M0075120D. Post-layout simulation results show that a SiC MOSFET gate driver with a crosstalk suppression capability of over 150 V/ns is obtained, which can reliably drive SiC MOSFET power devices.