Gate Misalignment Effect on Electrical Characteristics and Comparison of Analog/RF Performance Parameters of Charge Plasma-Based Triple Metal Dual Gate Vertical TFET

During the fabrication of a double gate TFET structure, there is a high chance of gate misalignment which may affect the sensitivity of the sensors. In this paper, we investigated various effects of gate misalignment and switching characteristics of charge plasma-based triple metal double gate vertical TFET on electrical characteristics. We observed effects on analog/RF parameters on the proposed structure such as transconductance (g ), output conductance (g ), intrinsic gain (A ), total gate capacitance (C ), and cut-off frequency (f ), along with threshold voltage (V ) and sub-threshold slope (SS). The work focuses on the investigation of these parameters in three scenarios of gate misalignment: towards the drain, towards the source, and towards the drain and source with different probable percentages of misalignment. The results are analyzed by considering SiO and HfO as gate oxide materials.