Origin of Hole‐Trapping States in Solution‐Processed Copper(I) Thiocyanate and Defect‐Healing by I₂ Doping (Adv. Funct. Mater. 25/2023)

Pimpisut Worakajit,Pinit Kidkhunthod,Thanasee Thanasarnsurapong,Saran Waiprasoet,Hideki Nakajima,Taweesak Sudyoadsuk,Vinich Promarak,Adisak Boonchun,Pichaya Pattanasattayavong

Advanced Functional Materials（2023）

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摘要

Hole Transports In article number 2209504, Pichaya Pattanasattayavong and co-workers, report that X-ray absorption spectroscopy reveals the incomplete coordination environment around Cu(I) centers in CuSCN which can be associated with SCN− vacancies acting as hole-trapping states. Doping with an optimal amount of I2 leads to defect-healing and a drastic improvement in hole transport.

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copperi,thiocyanate,doping

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Origin of Hole‐Trapping States in Solution‐Processed Copper(I) Thiocyanate and Defect‐Healing by I2 Doping (Adv. Funct. Mater. 25/2023)

Origin of Hole‐Trapping States in Solution‐Processed Copper(I) Thiocyanate and Defect‐Healing by I₂ Doping (Adv. Funct. Mater. 25/2023)