Anderson transition in compositionally graded p-AlGaN

Mg-doped, graded AlGaN films showed the formation of an impurity band and high, temperature-invariant p-conductivity even for doping levels well below the Mott transition. However, compensating point defects disrupted the impurity band, resulting in an Anderson transition from the impurity band to valence band conduction and a more than tenfold reduction in room-temperature conductivity. This is the first demonstration of Anderson-like localization in AlGaN films.