Ultrafast and self-powered MoSxSe2-x/Si photodetector with high light-trapping structures and SiOx interface layer
Nanoscale(2023)
摘要
The MoSxSe2-x nanofilms, as a typical metal dichalcogenide, have attracted great interest, due to the adjustable bandgap and distinctive electronic and optical properties. However, the inherent bandgap of MoSxSe2-x and...
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关键词
mosxse2-x/si photodetector,siox interface layer,self-powered,light-trapping
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