Memristor Constructed by CsPbIBr₂ inorganic halide perovskite for Artificial Synapse and Logic Operation

Neuromorphic devices are one of the promising electronic devices that are implementing artificial neural networks and substituting for traditional semiconductor devices in recent years. Inorganic halide perovskite (IMHP) is considered as an advantageous material to constitute neuromorphic components. Herein, the CsPbIBr 2 memristor displays superior resistive‐switching properties under various temperature and storage periods. In addition, synaptic plasticity, including paired pulse facilitation and spiking timing‐dependent plasticity, is observed for CsPbIBr 2 device, whose resistance manipulation is also established in both DC and pulse modes. Moreover, the decimal operation function of numbers by applying pulse stimulation to the device to regulate the device conductance is realized. This work demonstrates the feasibility of IMHP in neuromorphic devices, accelerating the application of neuromorphic computing.