Gate-Bias-Accelerated V _TH Recovery on Schottky-Type p-GaN Gate AlGaN/GaN HEMTs

In this work, the transient threshold voltage ( ${V}_{\text {TH}}{)}$ recovery on Schottky-type ${p}$ -GaN Gate AlGaN/GaN high-electron-mobility-transistors (HEMTs) is measured with a microsecond-level fast-tracking method. It is revealed that, during the gate turn-off transient, the recovery speed of ${V}_{\text {TH}}$ , can be obviously accelerated by applying an appropriate positive forward gate bias, which contradicts the widely used negative gate turn-off voltage. Electrical-field assisted emission of electron trap in the ${p}$ -GaN depletion region is speculated to be the dominant recovery mechanism, by comparing the recovery process between predamage device and fresh device. An electron trap with a 0.30 ± 0.03 eV level depth is extracted by the Arrhenius plot. This work is of great significance for understanding the mechanism of threshold voltage recovery, indicating that a positive gate base voltage may accelerate the ${V}_{\text {TH}}$ recovery.