Gate Dielectric Current Transport Mechanisms in N-SiC Metal Oxide Semiconductor Capacitor

In this work, the voltage and temperature behavior of gate leakage current transport in SiC/SiO 2 metal oxide semiconductor (MOS) capacitor was investigated. The wide range of gate voltage from-50 to 50V and temperature from 300 to 400 K, respectively uses to study the gate current conduction mechanism. Two dominant gate leakage current transport modes in SiO 2 during strong accumulation with the application of positive bias were caused by Fowler–Nordheim (FN) tunneling and Poole-Frenkel (PF) emission leakage conduction. For positively biased case, FN tunneling in the range of 30-40 V dominates the gate leakage current and Poole–Frenkel conduction attributed beyond 40 V.