GeSn vertical heterostructure p-i-n waveguide light emitting diode for 2 μm band silicon photonics
IEEE Electron Device Letters（2023）
摘要
We demonstrate an electrically-injected GeSn p-i-n waveguide light emitting diode on silicon, comprising a vertical Ge/GeSn/Ge double-barrier heterostructure for 2 μm wavelength band integrated photonics. The incorporation of 4.2% Sn into the GeSn active layer results in bandgap shrinkage and extends the operating range to 2200 nm. Our design of the double-barrier heterostructure with the waveguide provides good carrier and optical confinement. The electroluminescence spectra at different current injection densities were measured at room temperature, demonstrating the peak wavelength at 1962 nm with the cutoff at 2200 nm, covering the entire 2 μm wavelength band. The results show that the proposed vertical p-i-n heterostructure GeSn diode opens a pathway to meeting the demand for group IV-based light sources required for 2 μm wavelength band integrated photonics.
更多查看译文
关键词
vertical heterostructure,gesn,photonics,silicon
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要