Self-Powered -Ga₂O₃ Schottky Photodiode Array Featuring High External Quantum Efficiency Toward Solar-Blind UV Imaging

In this work, a Ga2O3-based Schottky photodiode array is fabricated and discussed, towards solar-blind UV image sensing application. The Ga2O3 thin film was prepared by metalorganic chemical vapor deposition, and the array was constructed via UV photolithography technique. Excited by 254 nm solar-blind UV light, the photodiode unit has responsivity, external quantum efficiency, and specific detectivity of 35.1 A/W, 1.7 x 10(4)% and 1.6 x 10(14) Jones at-10 V; and of 0.17 A/W, 83% and 1.94 x 10(13) Jones at 0 V. This indicates that it is a self-powered photodetector with high photo-response. The high external quantum efficiency at 0 V suggest a high efficient photon-electron conversion efficiency. In addition, the multi-pixels photodiode array exhibited low current deviation of 6.5% towards high-resolution and low chromatic aberration image sensing.