Self‐Assembled Lanthanum Oxide Nanoflakes by Electrodeposition Technique for Resistive Switching Memory and Artificial Synaptic Devices (Small 46/2023)

Small(2023)

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摘要
Resistive Switching Devices Seunghyun Lee, Tukaram D. Dongale, and co-workers self-assemble the lanthanum oxide nanoflakes for resistive switching (RS) devices. The fabricated devices exhibit bipolar RS characteristics, showcasing remarkable non-volatile memory properties and emulating bio-synaptic functionalities. More details can be found in article number 2303862.
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