K -band low-noise amplifier (LNA) for millimet"/>

High Gain and Low Power $K$-Band LNA With Reversed Current-Reuse Topology

IEEE Microwave and Wireless Technology Letters(2023)

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This letter reports a K -band low-noise amplifier (LNA) for millimeter-wave (mm-Wave) phased-arrays. A reversed three-stage current-reuse topology with $g_{m}$ -boost technique is proposed, which breaks the dilemma of traditional common-gate (CG) LNA facing current limitation and achieves high gain with low power consumption. The proposed LNA is fabricated with a standard 55-nm CMOS process. Measurement results show that 21.8 dB peak gain is achieved within 2.1 GHz bandwidth, while the noise figure (NF) is 4.04 dB. Benefiting from the reversed current-reuse structure, the power consumption of the LNA is only 3.05 mW from a uniform 1.2 V power supply.
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