Light‐Mediated Multi‐Level Flexible Copper Iodide Resistive Random Access Memory for Forming‐Free, Ultra‐Low Power Data Storage Application (Adv. Funct. Mater. 8/2023)

CuI-Based Nonvolatile Memory In article number 2211022, Sung Hun Jin, and co-workers explore the light mediated resistive switching of CuI based, resistive random-access memory device in terms of the enhancement scheme for device reliability, current conduction and switching mechanism via low temperature study. This potentially opens a new paradigm for nonvolatile memory technologies with high density multibit data storage.