Investigation on Switching Characteristics of 3.3kV SiC Power MOSFETs with SiO₂/ SiN Gate Stack

This paper focuses on reporting the switching behaviour of our Silicon Carbide (SiC) power MOSFETs, rated 3.3kV – 25A. The devices are based on a gate stack formed by SiO 2 /SiN and have been tested during Inductive Load Switching (ILS) in different conditions (nominal and SOA) with different chip configurations (single/multiple dies). In this contribution, the turn–on and turn–off curves are reported, along with the extracted RBSOA and switching energies.