A Terahertz Monostatic Transceiver in 90-nm SiGe BiCMOS

A combined common collector harmonic mixer and frequency multiplier is designed to operate at the fourth harmonic in a transceiver at around 0.88 THz in a 90-nm SiGe bipolar CMOS technology with an f(T) / f(max) of 300/480 GHz. The transceiver occupies a chip area of 1.35 mm(2) with a current consumption of 144 mA when connected to a 3.3-V supply. Measurements reveal an effective isotropic radiated power of - 30 dBm at 0.888 THz and a system receiver conversion gain of - 4 dB as well as a single-sideband noise figure of 57 dB at 0.912 THz.