Different reverse leakage current transport mechanismsof planar Schottky barrier diodes(SBDs) on Sapphire and GaN Substrate

Xiao Wang,Zhiyu Lin,Yumin Zhang,Guoqiang Ren,Ke Xu

arXiv (Cornell University)（2023）

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摘要

The effects of different substrates on the off state leakage current in gallium nitride planar diodes are experimentally demonstrated and studied by analyzing temperature-dependent current voltage characteristics.

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关键词

different reverse leakage,gan,current transport,planar schottky

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