Multiphysics Model Reconstruction Method of PP-IGBT and Stress Distribution Influencing Factors

Press-Pack Insulated Gate Bipolar Transistor (PP-IGBTs) device are the key components urgently needed for the development of high-voltage and large-capacity flexible DC transmission equipment. Aiming at the problem of inaccurate calculation due to three-dimensional modeling only considers ideal tolerance conditions in the existing multiphysics coupling modeling of PP-IGBT device, a multiphysics model reconstruction method of the PP-IGBT device is proposed. Firstly, for accurately establishing the multiphysics model of PP-IGBT device, the principles of three-dimensional model reconstruction method and multi-physics coupling are introduced. Secondly, the multiphysics model reconstruction method of PP-IGBT device is established by finite element method, and the material parameters and boundary conditions are set. Finally, the three-dimensional model reconstruction method of solid mechanical field of PP-IGBT device was verified by the pressure test paper method, and the pressure influencing factors of the multiphysics coupling model of PP-IGBT device were analyzed by the power cycle experiment.