Quantification of substitutional and interstitial carbon in thin SiGeC films using in-line X-Ray-Photoelectron Spectroscopy

Journal of Materials Chemistry C（2023）

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摘要

Original approach to detect and quantify carbon atoms located in different chemical states in SiGeC films using X-ray photoelectron spectroscopy.

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关键词

interstitial carbon,thin sigec films,in-line,x-ray-photoelectron

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