Material and Structural Engineering of Ovonic Threshold Switch for Highly Reliable Performance (Adv. Electron. Mater. 9/2022)

Hyun Kyu Seo,Jin Joo Ryu,Su Yeon Lee,Minsoo Park, Seong‐Geon Park,Wooseok Song, Gon−Ho Kim, Min Yang

Advanced electronic materials（2022）

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摘要

OTS Selection Devices Min Kyu Yang, Gun Hwan Kim and co-workers, in article number 2200161, successfully demonstrate a GeSeTe ovonic threshold switch (OTS) selector applied to a 3D cross-point structure. As a volatile memory, this OTS memory exhibits fast operation speed, low leakage current, and high endurance. OTS is also used as neurons in 3D cross-point structures for neuromorphic computing applications.

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ovonic threshold switch

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