HfO₂-based Ferroelectric Devices for Low Power Applications

HfO 2 -based ferroelectric devices have attracted extensive attention for diverse applications due to its fully CMOS compatibility and highly scalability. For low-power logic applications, we experimentally observed the negative capacitance (NC) effect in HfO 2 -based ferroelectric film and systematically studied its fundamental physics from the perspective of dynamic NC theory. Moreover, by exploiting the inherent physics of ferroelectric polarization switching, we present that ferroelectric devices can be utilized for the hardware implementation of neuro-inspired computing, providing ultralow hardware-cost and high energy-efficient solutions for artificial intelligence.