Prediction of a new two-dimensional valleytronic semiconductor MoGe₂P₄ with large valley spin splitting

Ying Liu,Xinyu Xu, MengXian Lan,SuEn Wang,Tian Huang,Hong Wu,Feng Li,Yong Pu

Physical Chemistry Chemical Physics（2022）

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摘要

2D MoGe 2 P 4 is predicted to be a direct bandgap semiconductor which has large valley spin splitting. Biaxial strain can regulate the transition of 2D MoGe 2 P 4 from a semiconductor to a metal. 2D MoGe 2 P 4 has excellent absorption in ultraviolet and visible light regions.

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关键词

large valleytronic spin splitting,semiconductor,two-dimensional

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Prediction of a new two-dimensional valleytronic semiconductor MoGe2P4 with large valley spin splitting

Prediction of a new two-dimensional valleytronic semiconductor MoGe₂P₄ with large valley spin splitting