Anisotropic Charge Transport Enabling High‐Throughput and High‐Aspect‐Ratio Wet Etching of Silicon Carbide (Small Methods 8/2022)

Dachuang Shi,Yun Chen,Zijian Li, Shankun Dong,Liyi Li,Maoxiang Hou,Huilong Liu,Shenghe Zhao,Xin Chen,Ching‐Ping Wong,Ni Zhao

Small Methods（2022）

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摘要

Inside Back Cover In article number 2200329, Chen, Zhao, and co-workers demonstrated an etching structure that exploits anisotropic charge carrier flow to enable high-throughput, external-bias-free wet etching of SiC micro-/nanostructures with record high etching speed and aspect ratio.

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关键词

silicon carbide,charge transport

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