Analysis of Strain in Ion Implanted 4H-Sic by Fringes Observed in Synchrotron X-ray Topography
JOURNAL OF CRYSTAL GROWTH（2024）
Key words
A1. High resolution X-ray diffraction,A1. Doping,A1. Stresses,A1. X-ray topography,A1. Characterization,B2. Semiconducting silicon compounds
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