Semiconductor full quantum hydrodynamic model with non-flat doping profile: (i) stability of steady state

COMMUNICATIONS IN MATHEMATICAL SCIENCES(2023)

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摘要
This is the first part of our series of studies concerning the full quantum hydrody-namic model for semiconductors with non-flat doping profile. In this paper, we are concerned with the existence, uniqueness , asymptotic stability of subsonic steady states to the model in a bounded interval, which is subject to physical boundary conditions. The main results are proved by Stampac-chia's truncation method, the Leray-Schauder Fixed Point Theorem, Schauder's Fixed Point Theorem and intricate energy estimates.
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关键词
. Full quantum hydrodynamic model, dispersive velocity term, non-flat doping profile, asymptotic stability, semiconductor
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