Carrier-phonon interaction and anharmonic phonon decay in ZnS thin film studied by resonance Raman scattering

Resonance Raman scattering was carried out on polycrystalline zinc sulfide (ZnS) thin film. The resonance Raman spectra revealed strong carrier-phonon interaction where longitudinal optical phonon (LO) with overtones up to the fourth order and its combination phonons with transverse acoustic (TA) phonons were observed, namely, nLO + mTA (where n and m are integers). The resonance Raman scattering processes were well explained within the framework of the cascade scattering model. The wavenumber of the LO phonon with increased temperature was dominated by anharmonic phonon decay. Detailed experimental data fittings showed that thermal expansion contribution to the nLO phonon overtones differed from the fundamental LO phonon due to the involvement of the scattering of the LO phonons at the Brillion zone edge. The negative value of the mode-Gruneisen parameter for the TA phonon slowed down the wavenumber shift of the combination nLO + mTA phonon modes with increasing temperature compared to the nLO phonons. The anharmonic phonon decay of combination nLO + mTA phonons were dominated by anharmonic phonon decay of nLO phonons. Resonance Raman scattering was carried out on polycrystalline zinc sulfide (ZnS) thin film. The resonance Raman spectra revealed strong carrier-phonon interaction where longitudinal optical phonon (LO) with overtones up to the fourth order and its combination phonons with transverse acoustic (TA) phonons were observed, namely, nLO + mTA (where n and m are integers). The resonance Raman scattering processes were well explained within the framework of the cascade scattering model.image