-Ga₂O₃ Lateral Schottky Barrier Diodes With > 10 kV Breakdown Voltage and Anode Engineering

In this letter, we demonstrated beta-Ga2O3 lateral Schottky barrier diodes (SBDs) with breakdown voltage (BV) over 10 kV via anode engineering techniques. Post-anode deposition annealing (PAA) was implemented to enhance the Schottky barrier height (SBH) to minimize the leakage current and suppress the interface state density (D-it) by over 1 order of magnitude. It is found that the D-it was extracted to be only 3 x 10(10) cm(-2)eV-1 at the energy level near the conduction band after the PAA treatment. Benefiting from the PAA and the coupled as well as the carefully designed dual field-plate (FP) structure, the BV of the SBD was enhanced from about 4 kV to over 10 kV while the turn-on voltage (V-on) for those SBDs remained approximately at 1 V. These findings show the immense potential of anode engineered Ga2O3 diodes for future high-voltage and high-power electronic systems.