A TiSnNbTaGa₂O₁₂ high-entropy microwave dielectric ceramic with rutile structure and near-zero _f

TiSnNbTaGa2O12 (TSNTGO) high-entropy dielectric ceramic was successful synthesized using the solid-state reaction method. X-ray diffraction (XRD), Rietveld refinement and transmission electron microscopy (TEM) were used to verify that all samples have rutile structure of P42-mnm space group. The analysis of Raman spectra proved that the epsilon(r) exhibited a contrary changing trend as that of Raman shift near 822 cm(-1), and the same similar relationship occurred between Qxf values and full width at half maximum (FWHM). The exploration of complex chemical bonding theory (P-V-L theory) for TSNTGO ceramics suggested that the bond ionicity played a dominant role in epsilon(r), while Qxf and tau(f) were primarily determined by lattice energy and bond energy, respectively. Notably, the TSNTGO ceramics sintered at 1275 degree celsius demonstrated optimal microwave dielectric properties of epsilon(r) = 33.62 +/- 0.03, Qxf = 51,832 +/- 1000 GHz (f(0) = 6.4 GHz), and tau(f) = -0.38 +/- 0.16 ppm/degree celsius.