Synthesis and Characterization of a Zirconium (Zr) Thin Film on Si(100) via Pulsed Laser Deposition

Zirconium (Zr) thin films were deposited on silicon using pulsed laser deposition (PLD) with two laser wavelengths (1064 nm and 532 nm) and varying substrate temperatures (25 degrees C, 300 degrees C, and 500 degrees C) and laser fluences (0.25, 0.5, 1.0 J/cm2). Results indicate that smoother films were obtained with 1064 nm and surface roughness increased with higher fluences. Optimal crystalline films were obtained at 300 degrees C. XRD, SEM, and AFM analysis revealed distinct patterns and peaks related to laser parameters. The growth mechanisms of a Zr film were computed based on a well-known continuum model of thin film growth. Our simulations agree with experimental observations. The study highlights crucial factors affecting Zr thin film deposition and provides insights for optimizing PLD parameters to achieve high-quality films.