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Study of Anode Doping and Avalanche in Foundry Compatible 1.2 Kv Vertical GaN PiN Diodes

Mona A. Ebrish,Matthew Porter,Alan Jacobs,James C. Gallagher,Robert J. Kaplar,Brendan P. Gunning,Karl D. Hobart,Travis J. Anderson

APPLIED PHYSICS EXPRESS（2023）

Cited 2|Views26
Key words
Gallium nitride (GaN),breakdown voltage,avalanche,p-i-n (PIN) diodes,anode doping edge termination,ion implantation
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