Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology

Hangning Shi,Ailun Yi, Jiaxin Ding,Xudong Liu, Qingcheng Qin,Juemin Yi,Junjie Hu,Miao Wang,Demin Cai,Jianfeng Wang,Ke Xu,Fengwen Mu,Tadatomo Suga,Rene Heller,Mao Wang,Shengqiang Zhou,Wenhui Xu,Kai Huang,Tiangui You,Xin Ou

SCIENCE CHINA-INFORMATION SCIENCES（2023）

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摘要

The defects and their thermo-evolution in the hetero-integrated GaN films on Si(100) substrate were thoroughly studied. The nano-cavity defects and residual H ions in the as-transferred GaN film evolved into larger size cavity defects due to the OR mechanism and MC mechanism, while the GaN lattice was recovered and the NBE emission of the post-annealed GaN film at low temperature reappeared. The results of PAS and RBS also confirmed the evolution of defects and the recovery of GaN lattice.

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