Ionic liquid gating of YBa₂Cu₃O_7-x with a BN capping layer for enhanced stability and efficiency

In this study, we explored the impact of ionic liquid gating on YBa(2)Cu(3)O(7-x )id N-diethyl-N-methyl-N-(2methoxyethyl)ammonium bis(trifluoromethanesulfonyl)imide (DEME-TFSI) results in irreversible electrochemical reactions, despite the application of a relatively low gate voltage at 220 K. Capping a thin layer of boron nitride (BN) on YBa2Cu3O7-x enabled a reversible modulation of carrier density at 300 K. Benefiting from the higher ion mobility of ionic liquid at 300 K, this modification led to more than a one-time increase in carrier density, a 3-time improvement in voltage modulation efficiency, and a reversible tuning of the superconducting temperature. These findings suggest that using a BN capping layer holds promise for enhancing the stability and efficiency of devices using ionic liquid gating.(c) 2023 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license(http://creativecommons.org/licenses/by/4.0/).