The Investigation of Source Field Plate on the Performance of pGaN Gate Device and Dual-Gate Bidirectional Switch using TCAD Simulation.

This paper presents the investigation of the source field plate geometry on the p-GaN/GaN/AlGaN HEMT bidirectional switch using TCAD simulation. The output and transfer characteristics of both single-gate and dual-gate GaN devices are obtained. Moreover, the impact of the source field plate on the dynamic on-resistance of the p-GaN gate device is verified. Building upon previous research on field plates, this study examines the field plate's influence on breakdown voltage from two perspectives. The first aspect considers the number of field plate layers. Adjusting the length of the two field plate layers shows that the breakdown voltage could reach a peak value. The second aspect focuses on the field plate geometry. Increasing the transverse and longitudinal distance between the field plate and the gate effectively enhances the device's breakdown performance.