Свойства резистивных структур на основе полиморфных фаз оксида галлия

The influence of UV radiation and a strong electric field on the I–V characteristics of resistive structures based on polymorphic films of gallium oxide (Ga2O3) is considered. Ga2O3 films were deposited by the method of chloride vapor-phase epitaxy (HVPE) on smooth and structured sapphire substrates with a baseline (0001) orientation. α-Ga2O3 films were produced on smooth substrates, and deposition on patterned sapphire substrates templates produced a mixed structure containing both α-Ga2O3 and ε-Ga2O3. The switching effect was observed in metal / Ga2O3 / metal structures based on two-phase films. Structures pass from a low-resistance (LR) state to a high-resistance (HR) state when exposed to a strong electric field and radiation with λ = 254 nm.