Эффект резистивного переключения и памяти в композитных пленках на основе оксида графена в матрице металлорганических перовскитов

The effect of resistive switching in composite films based on organometallic perovskites CH3NH3PbI3 and CH3NH3PbBr3 with graphene oxide (GO) particles with a concentration of 1-3 wt% and a layer of fullerene derivative [60]PCBM is studied. It was found that the effect of resistive switching in Ag/[60]PCBM/ CH3NH3PbI3(Br3):GO/PEDOT:PSS/ITO/glass films manifests itself in a sharp change in the electrical resistance from a low-conductive to a high-conductive state when both positive and negative bias is applied on Ag and ITO electrodes (0.1-1.0 V) both in the dark and when illuminated by a simulated sunlight. It is assumed that the mechanism of resistive switching is associated with the capture and accumulation of charge carriers in GO particles due to the reduction/oxidation processes. The investigated composite films are promising for the creation of non-volatile memory cells.