Lowest IOFF < 3×10 -21 A/μm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT.Attilio Belmonte, S. Kundu, S. Subhechha,Adrian Vaisman Chasin,Nouredine Rassoul,Harold Dekkers, H. Puliyalil, F. Seidel, P. Carolan,Romain Delhougne,Gouri Sankar KarSymposium on VLSI Circuits(2023)引用 0|浏览1暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要